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| 1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-179B (Z) Rev. 2 Features * Low forward resistance. (r f = 0.9max) * Suitable for 5mm pitch high speed automatical insertion. * Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS110 Cathode band Verdure Package Code MHD Outline 1 Cathode band 2 1. Cathode 2. Anode 1SS110 Absolute Maximum Ratings (Ta = 25C) Item Reverse voltage Forward current Junction temperature Storage temperature Symbol VR IF Tj Tstg Value 35 100 175 -65 to +175 Unit V mA C C Electrical Characteristics (Ta = 25C) Item Forward voltage Reverse voltage Reverse current Capacitance Forward resistance Symbol VF VR IR C rf Min -- 35 -- -- -- Typ -- -- -- -- -- Max 1.0 -- 0.1 1.2 0.9 Unit V V A pF Test Condition I F = 10mA I R = 10A VR = 25V VR = 6V, f = 1MHz I F = 2mA, f = 100MHz 1SS110 10 -2 10 Forward current I F (A) -4 10-6 10 -8 10 -10 10 -12 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 10 f = 1MHz Capacitance C (pF) 1.0 10 -1 1.0 10 Reverse voltage VR (V) 40 Fig.2 Capacitance Vs. Reverse voltage 1SS110 10 2 f = 100MHz Forward resistance r f ( ) 10 1.0 10 -1 10 -2 10 -4 10-3 10-2 10 -1 Forward current I F (A) Fig.3 Forward resistance Vs. Forward current 1SS110 Package Dimensions Unit: mm 26.0 Min 2.4 Max 26.0 Min 2.0 Max 0.4 1 2 Cathode band (Verdure) 1 Cathode 2 Anode HITACHI Code JEDEC Code EIAJ Code Weight (g) MHD DO-34 -- 0.084 |
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